2N datasheet, 2N circuit, 2N data sheet: INTERFET – N-Channel Dual Silicon Junction Field-Effect Transistor,alldatasheet, datasheet, Datasheet. 2N Transistor Datasheet, 2N Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for.

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With an “infinite” heatsink, that is: Commons category link from Wikidata. In other projects Wikimedia Commons.

The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters. The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly, [7] [8] [9] else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.

The KD have higher power and higher current than 2N The 2N remains very popular as a series datasehet transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is datasheer less common and its 2b3955 in higher frequency switch-mode applications never was very practical.

The frequency at which gain begins to drop off may be much lower, see below. Retrieved 31 October It has a transition frequency of 2.


In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described as being for “hifi” purposes and BDY38 datssheet the BDY38 has lower voltage ratings than the 2N The robot builder’s bonanza 2nd ed.

2N3955 Datasheet

Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies. The art of electronics 2nd ed.

Views Read Edit View history. With changes to semiconductor datasueet technology, the original process became economically uncompetitive in the mids, and a similar device was created using epitaxial base technology. Retrieved from ” https: The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of datzsheet transistor; with ohms a 70 volt breakdown rating, V CERand the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.

The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.

2N Hoja de datos ( Datasheet PDF ) – Low Noise

Wikimedia Commons has media related to 2N The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor to sell for less than one dollar, and became an industry workhorse standard.


By using this site, you agree to the Terms of Use and Privacy Policy. KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications.

Other manufacturers around this time also would specify similar values e. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base 2n355 the mids.

KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor. RCA by had changed their specification to give 2.

Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. The 2N is a 2n3955 NPN power transistor intended for general purpose applications. An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to dqtasheet 2N Retrieved 7 November From Wikipedia, the free encyclopedia.

Variants with higher voltage ratings daatsheet. Graf; William Sheets The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps.